SCIENTIFIC AND ORGANIZATION STRUCTURE
LABORATORY OF VACUUM ELECTRONICS
The Laboratory of Vacuum Electronics (LVE) was separated into an independent laboratory from the Department of Physical Electronics, headed by Academician G.A. Mesyats, where LVE existed before as an scientific team. The decision on the organization of the laboratory was made by the Scientific Council of the Institute of High Current Electronics (IHCE) of the Siberian Branch of the USSR Academy of Sciences (Minutes No. 12 of 29.12.1985) as it was suggested by G.A. Mesyats and approved by Order No. 2 of the IHCE on 02.01.1986. Dr D.I. Proskurovsky was elected as the head of the laboratory. He held that position until the middle of 2006. Since July 2006, that position is held by Dr. A.V. Batrakov. During the existence of the LVE, 14 Ph.D. and 4 D.Sc. thesises were defended, 3 scientific books were published, 1 Governmental Prize (as a part of a team) and three international prizes were awarded. About 300 articles were published in peer-reviewed journals and proceedings of scientific conferences, received more than 20 patents for inventions. Currently, 21 employees are working at the laboratory, including 4 doctors of science (D.Sc.), 6 candidates of science (Ph.D.), 1 postgraduate student, 5 junior researchers without a degree, 4 engineers and 1 technician.
Investigation of the physics of vacuum discharges, explosive electron emission and methods of suppressing the emission activity of surfaces and increasing the electrical strength of vacuum isolation.
Research and development of methods for generating intense fluxes of charged and neutral particles and plasma. Creation of scientific and technical bases for beam-plasma technologies.
Reasearch of impact of concentrated energy fluxes on condensed matter.
The main scientific achievements
In the field of vacuum discharge physics:
- Phenomenon of explosive electron emission (in co-authorship) has been discovered.
- Cathode processes taking place at electron emission on solid and liquid-metal cathodes and their role in vacuum discharge development was studied.
- Technique of vacuum insulation electrical hold-off increase through electrode surface treatment by pulsed electron and ion beams was offered and developed.
In the field of generation of pulsed electron beams:
- Techniques on production of low-energy high-current electron beams in e-guns with plasma anode and explosive emission cathode placed in applied guiding magnetic field was introduced and developed. Thereupon the sources of wide-aperture electron beams intended for surface treatment of materials and products having no analogues in the world by parameters were created.
In the field of modification of metallic materials by intensive pulsed electron beams:
- Scientific grounds for modification of surface layers of metallic materials by intensive pulsed electron beams have been developed. Definite directions for use of such beams in technologies were offered.
In the field of modification of semiconductor materials by particle beams:
- Phenomenon of impurity quasi-accelerated evaporation from ion-alloyed layer of silicon at rapid e-beam heating was discovered and studied. It is suggested to use this phenomenon in formation of ultra-small p-n transitions in semiconductor structures.
- Not analogous by parameters, the atomic hydrogen source has been offered and manufactured meant for treatment of surface layers of semiconductor structure in high vacuum.
- Regularities of semiconductor materials cleaning by atomic hydrogen flow from any type of surface impurities have been studied and perspectives of the created source were shown. Availability of this source for hydrogenation of near-surface region of semiconductor materials with the aim to control electrophysical properties of the structures formed was also proposed.
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